Silicon Carbide Semiconductor Devices Market Size to Hit USD 24.95 Bn by 2034
Silicon Carbide Semiconductor Devices Market Key Takeaways
- Asia Pacific dominated the silicon carbide semiconductor devices market in 2024.
- North America is expected to witness the fastest growth in the coming years.
- By component, the power modules segment held the largest market share in 2024.
- By component, the FET/MOSFET transistors segment is projected to grow at the fastest rate during the forecast period.
- By product, the power semiconductors segment contributed the biggest market share in 2024.
- By product, the optoelectronic devices segment is likely to grow at a significant CAGR over the studied period.
- By wafer size, the 1 inch to 4 inches segment captured the highest market in 2024.
- By wafer size, the 10 inches and above segment is expected to expand at the fastest CAGR in the foreseeable period.
- By end-use, the automotive segment generated the major market share in 2024.
- By end-use, the energy and power segment is projected to grow at the highest CAGR in the near future.
Silicon Carbide Semiconductor Devices Market Overview
In data centers and telecommunications, the Silicon Carbide Semiconductor Devices Market is rapidly expanding as these sectors seek higher power efficiency and system reliability. Power supplies, voltage regulators, and uninterruptible power systems (UPS) in data centers benefit from SiC technology by reducing power losses and improving energy efficiency.
Similarly, in telecom infrastructure—especially with the global rollout of 5G networks—SiC devices support compact, high-performance power modules capable of handling higher loads and frequencies.
Silicon Carbide Semiconductor Devices Market Drivers
The demand for power efficiency in data centers, which are among the largest energy consumers in the IT sector, is a significant market driver. With the rise of cloud computing, AI processing, and big data, data center operators are under pressure to optimize performance and reduce operational costs.
SiC-based power electronics offer reduced switching losses, compact form factors, and improved thermal management, making them ideal for high-load applications. The 5G infrastructure build-out also creates strong demand for reliable and compact power systems, where SiC plays a critical role.
Silicon Carbide Semiconductor Devices Market Opportunities
The expansion of edge computing and micro data centers opens up new use cases for SiC semiconductors in distributed power systems. There is also a strong opportunity in developing integrated SiC power modules for telecom base stations and backhaul networks. As sustainability becomes a priority in IT infrastructure, companies are increasingly turning to SiC to meet their green data center goals.
Silicon Carbide Semiconductor Devices Market Challenges
A key challenge is the integration of SiC devices into existing power architectures in legacy data centers. Reliability over long-term continuous operation and compatibility with current power conversion systems need to be ensured. Additionally, as data centers operate under strict uptime requirements, any new technology must be thoroughly validated before full-scale deployment.
Silicon Carbide Semiconductor Devices Market Regional Insights
North America dominates this segment with its large concentration of hyperscale data centers and rapid 5G expansion. Europe follows with a focus on sustainable and energy-efficient infrastructure. Asia-Pacific, particularly countries like China, South Korea, and Singapore, is witnessing rapid growth due to the proliferation of cloud services and 5G deployment.
Silicon Carbide Semiconductor Devices Market Recent Developments
Recent product launches include compact, high-efficiency SiC modules for rack-level power supplies in data centers. Several telecom companies have announced partnerships with semiconductor firms to develop custom SiC-based solutions for 5G power infrastructure. Moreover, research is ongoing into combining SiC with gallium nitride (GaN) in hybrid systems to further enhance performance in high-frequency applications.
- In January 2025, Wolfspeed, Inc., a global leader in silicon carbide technology, introduced its new Gen 4 technology platform, which enables design rooted in durability and efficiency, all while reducing system cost and development time. Wolfspeed’s highly flexible Gen 4 MOSFET technology platform supports long-term roadmaps for high-performance, application-optimized products.
- In December 2024, ONSemi agreed to acquire the Silicon Carbide Junction Field-Effect Transistor technology business, including the United Silicon Carbide subsidiary, from Qorvo for USD 115 million in cash. The acquisition will complement ONSemi’s extensive EliteSiC power portfolio and enable the company to address the need for high energy efficiency and power density in the AC-DC stage in power supply units for AI data centers.
Silicon Carbide Semiconductor Devices Market Companies
- ALLEGRO MICROSYSTEMS, INC.
- Infineon Technologies AG
- ROHM Co., Ltd.
- STMicroelectronics N.V.
- ON SEMICONDUCTOR CORPORATION (on semi)
- WOLFSPEED, INC.
- Gene Sic Semiconductor
- TT Electronics plc.
- Mitsubishi Electric Corporation
- Powerex Inc.
- Toshiba Corporation
- FUJI ELECTRIC CO., LTD.
Segments Covered in the Report
By Component
- Schottky Diodes
- FET/MOSFET Transistors
- Integrated Circuits
- Rectifiers/Diodes
- Power Modules
- Others
By Product
- Optoelectronic Devices
- Power Semiconductors
- Frequency Devices
By Wafer Size
- 1 inch to 4 inches
- 6 inches
- 8 inches
- 10 inches & above
By End-use
- Automotive
- Electric Vehicles
- IC Automobiles
- Consumer Electronics
- Aerospace & Defense
- Medical Devices
- Data & Communication Devices
- Energy & Power
- EV Infrastructure
- Power Distribution & Utilities
- Others
By Region
- North America
- Europe
- Asia Pacific
- Middle East & Africa
- Latin America
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